EC8252 – Electronic Devices – Regulation 2017 Syllabus

EC8252 – NOTES & QP

NOTES CLICK HERE
SEMESTER QP CLICK HERE

EC8252 – SYLLABUS

UNIT I SEMICONDUCTOR DIODE

PN junction diode, Current equations, Energy Band diagram, Diffusion and drift current densities, forward and reverse bias characteristics, Transition and Diffusion Capacitances, Switching Characteristics, Breakdown in PN Junction Diodes.

UNIT II BIPOLAR JUNCTION TRANSISTORS

NPN -PNP -Operations-Early effect-Current equations — Input and Output characteristics of CE, CB, CC – Hybrid -p model – h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter Transistor.

UNIT III FIELD EFFECT TRANSISTORS

JFETs — Drain and Transfer characteristics,-Current equations-Pinch off voltage and its significance- MOSFET- Characteristics- Threshold voltage -Channel length modulation, D-MOSFET, E-MOSFET- Characteristics — Comparison of MOSFET with JFET.

UNIT IV SPECIAL SEMICONDUCTOR DEVICES

Metal-Semiconductor Junction- MESFET, FINFET, PINFET, CNTFET, DUAL GATE MOSFET, Schottky barrier diode-Zener diode-Varactor diode –Tunnel diode- Gallium Arsenide device, LASER diode, LDR.

UNIT V POWER DEVICES AND DISPLAY DEVICES

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS-VMOS. LED, LCD, Photo transistor, Opto Coupler, Solar cell, CCD.

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