EC8351 – Electronic Circuits -I – Regulation 2017 Syllabus

EC8351 – NOTES & QP

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SEMESTER QP CLICK HERE

EC8351 – SYLLABUS

UNIT I BIASING OF DISCRETE BJT, JFET AND MOSFET

BJT– Need for biasing — DC Load Line and Bias Point — DC analysis of Transistor circuits — Various biasing methods of BJT — Bias Circuit Design — Thermal stability — Stability factors — Bias compensation techniques using Diode, thermistor and sensistor — Biasing BJT Switching Circuits- JFET — DC Load Line and Bias Point — Various biasing methods of JFET — JFET Bias Circuit Design — MOSFET Biasing — Biasing FET Switching Circuits.

UNIT II BJT AMPLIFIERS

Small Signal Hybrid p equivalent circuit of BJT — Early effect — Analysis of CE, CC and CB amplifiers using Hybrid p equivalent circuits — AC Load Line Analysis- Darlington Amplifier — Bootstrap technique — Cascade, Cascode configurations — Differential amplifier, Basic BJT differential pair — Small signal analysis and CMRR.

UNIT III SINGLE STAGE FET, MOSFET AMPLIFIERS

Small Signal Hybrid p equivalent circuit of FET and MOSFET — Analysis of CS, CD and CG amplifiers using Hybrid p equivalent circuits — Basic FET differential pair- BiCMOS circuits.

UNIT IV FREQUENCY RESPONSE OF AMPLIFIERS

Amplifier frequency response — Frequency response of transistor amplifiers with circuit capacitors — BJT frequency response — short circuit current gain — cut off frequency — fa, fß and unity gain bandwidth — Miller effect — frequency response of FET — High frequency analysis of CE and MOSFET CS amplifier — Transistor Switching Times.

UNIT V POWER SUPPLIES AND ELECTRONIC DEVICE TESTING

Linear mode power supply — Rectifiers — Filters — Half-Wave Rectifier Power Supply — Full- Wave Rectifier Power Supply — Voltage regulators: Voltage regulation — Linear series, shunt and switching Voltage Regulators — Over voltage protection — BJT and MOSFET — Switched mode power supply (SMPS) — Power Supply Performance and Testing — Troubleshooting and Fault Analysis, Design of Regulated DC Power Supply.

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